A STUDY OF CZTS SOLAR CELL THROUGH NUMERICAL ANALYSIS

Abstract

The characteristics performance of the kieserite based Cu2ZnSnS4 based solar cell is investigated
using a simulation program called Analysis of Microelectronic and Photonic Structures (AMPS).
The cell structure is based on p-type Cu2ZnSnS4(CZTS) compound semiconductor as the
absorber layer and ZnS as window layer. Al doped ZnO (AZO) is used as the transparent
conductive oxide layer, which acts as the front contact of the cell. I study the influence of the
operating temperature, doping concentration, thickness of the different layers. The band-gap
variation of the absorber CZTS layer is also investigated. The thickness of the absorber layer is
varied from 800 nm up to 3.5 µm and found substantial increase in the efficiency. The increased
working temperature has a strong influence on the solar cell efficiency and the temperature
coefficient is calculated to be about -0.17%/K. The highest efficiency is achieved by varying the
carrier concentration profile of the absorber layer. All these simulation results will give some
important guides for feasibly fabricating higher efficiency CZTS solar cells.