STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF ALUMINIUM DOPED ZINC OXIDE THIN FILM BY RF MAGNETRONSPUTTERING METHOD

Abstract

Thin film of Al doped ZnO has been fabricated by depositing n-ZnO (5 mol% Al2O3 doped
ZnO) layer on glass substrate. The XRD analysis confirms that all the three films have (002)
preferential orientation with hexagonal wurtzite structure. From Hall measurement, all the
films shown n- type conductivity with increased Career concentration which confirms the
direct proportionality of career concentration with sputter time. The resistivity is found to be
decreased with increase in sputter time due to fewer mismatches from the reflectance
spectrum, the reflectance value is found to be as less as possible 35%. So that the films can be
used as antireflection coating in solar cells. The Band gap energy of the films is found from
Tauc’s plot and it is found that (2.49eV) band gap value increases due to Burstein-moss
effect.